Double Fish Enterprise co., ltd.

Products
BG Tape – Back Grinding Tape for Wafer Thinning Applications
  • BG Tape – Back Grinding Tape for Wafer Thinning Applications

BG Tape – Back Grinding Tape for Wafer Thinning Applications

Wafer Thinning Process in Semiconductor Manufacturing

  1. Purpose: As semiconductor devices continue to shrink in size, wafer thinning has become essential to save space and improve thermal and electrical performance.

  2. Process: Thinning is typically performed by mechanically grinding the backside of a wafer while keeping it securely supported.

Function of BG Tape

  1. Protection: BG tape protects delicate surface structures such as bumps during the grinding process.

  2. Fixation: It ensures the wafer remains securely attached to the grinding equipment, maintaining high dimensional accuracy.

  3. Clean Removal: After grinding, the tape can be easily peeled off without damaging the wafer surface or leaving adhesive residue.


Doublefish® Manufacturing Advantages

Extreme Uniformity (Low TTV)

While maintaining Total Thickness Variation (TTV) below 150 μm is already a challenge, controlling TTV for thicker BG tapes is even more demanding. The Doublefish® SH Series achieves exceptional flatness with TTV ≤ 5 μm, ensuring excellent uniformity for precision grinding.

Non-UV Type Adhesive

Unlike UV-release tapes that may leave adhesive residue and require special storage conditions, non-UV type BG tapes minimize environmental impact on the process and may contribute to higher production yields. This tape type is increasingly preferred by leading semiconductor manufacturers.

Single-Layer Construction

Whereas other BG tapes often use a dual-layer structure—one for cushioning and another for clean release—Doublefish®’s innovative single-layer design provides both stress buffering and clean debonding, simplifying structure while maintaining high performance.

Item SH-800275 SH-800475
Vendor CI Company CI Company
Total Tape Thickness 275 µm 475 µm
Base Film PET 75 µm PET 75 µm
Intermediate Layer 200 µm

400 µm